The new HV BiMOSFETs feature blocking voltage capabilities of up to 3kV with corresponding collector current ratings of up to 130 Amperes and uniquely feature a free intrinsic body diode similar to that found in a conventional MOSFET. This new family will compliment IXYS’ other high voltage lines, finding applications in a diverse range of products such as AC switches, circuit breakers, radar pulse modulators, switch-mode power supplies, capacitor discharge circuits, and laser and X-Ray generation systems.
Parallel operation of this new class of devices can be easily achieved due to the positive voltage temperature coefficient of both of its saturation voltage Vce(sat) and the forward voltage drop of its intrinsic diode Vf. Furthermore, this free intrinsic body diode serves as a protection diode, providing an alternative path for inductive load current during the turn-off transition of the device, suppressing high Ldi/dt voltage transients from inflicting damage on to the device.
IXYS’ HV BiMOSFETs represent excellent candidates for high-voltage, high current applications where traditional MOSFETs are typically utilized in series-parallel strings to overcome their voltage current and on-state limitations. Such device consolidation reduces the number of power devices and associated complex drive components, resulting in a much simpler system design, with improved reliability, and a lower system cost.
These devices are also available in IXYS’ proprietary ISOPLUS packaging, offering high isolation capability (up to 3000V) and thermal performance.
