Improvements in the non-planar MOSFET technology, namely trench MOSFETs, resulted in attractive technical advantages to the TrenchMV Power MOSFET family. These include lower Rdson, lower gate charge, increased ruggedness and faster switching speed representing a major efficiency improvement.
The new GMM 3x series offers improved switching performance by using 3 identical and optimized half-bridges with minimized stray inductance and the disappearance of the internal coupling effects of the traditional 6-pack. The Kelvin source contacts directly connected to the MOSFET die allow best control during the high speed operation of the TrenchMV MOSFET family. The construction using Direct Copper Bonded (DCB) ceramic isolation in concert with optimized molding technology creates a best-in-class reliability with extended power cycling capability and excellent thermal performance products.
IXYS provides the GMM 3x series in the voltage range of 40 to 150V. GMM 3×160-0055X2-SMD (55V, 150A, 0,0022Ohms with isolated Rthjc = 1.0 K/W) and GMM 3×120-0075X2-SMD (75V, 110A, 0,004Ohms) are examples of this new family. The devices can be surface mounted with standard pick and place machines and are suitable for re-flow automated soldering processes for low cost production for our worldwide customers. This GMM series offers a lower weight, high power density electrical isolation to a higher degree than discretes or other power modules.
Combining the low loss switching of the MOSFET with the advanced electrical, thermal and mechanical properties of the ISOPLUS-DIL creates an advanced solution for both advanced applications such as hydraulic control for automotive systems and standard industrial motor control (e.g. robotics). The advanced packaging system is also customizable for other topologies.
