Bridgelux’s cool white LEDs deliver efficiencies up to 160Lm/W at a CCT of 4350K and its warm white LEDs deliver 125Lm/W at a color temperature of 2940K and CRI of 80.
Using its buffer layer technology, Bridgelux has demonstrated growth of crack-free GaN layers on eight-inch silicon wafers, without bowing at room temperature.
The company said its GaN-on-Si technology will reduce the cost of manufacturing LEDs, compared to conventional white lighting technology.
Bridgelux CTO Steve Lester said the new performance levels are the highest Lm/W values yet published for GaN-on-Si and rival the best commercial LEDs grown on sapphire or silicon carbide.
"Our first commercially available GaN-on-Si products remain on schedule for delivery to the market within the next two years," Lester said.
Bridgelux’s buffer layer process produces crack-free wafers that are virtually flat at room temperature.
Wavelength uniformity of sigma 6.8nm has been demonstrated for eight-inch LED wafers with median wavelength of 455nm.
Bridgelux is a developer and manufacturer of LED lighting technologies and solutions.
