The DMP2160UFDB co-packages two of the same MOSFETs in the DFN2020 format. When compared to large 3mm x 3mm footprint packages traditionally used in portable application designs, the DFN2020 uses 55% less PCB space. In addition, with an off-board height of only 0.5mm, the package is also 50% thinner, suiting new product design. The new MOSFETs utilized in these packages feature low gate charge (Qg) and a typical RDS(ON), of 86m? at VGS of 1.8V, ensuring that both switching and on state losses are reduced.
To further enhance efficiency, the diode employed in these packages is the company’s own high performance SBR rectifier. With a typical low forward voltage of only 0.42V, the SBR provides a considerable decrease in power dissipation compared to conventional Schottky diodes.
