“The IFND89 offers a unique combination of high gain, low noise and low voltage, and the internal back-to-back diodes offer several advantages to the designer, such a providing over-voltage protection by clipping transient spikes,” stated Tom Wiseman, InterFET vice president of sales. “The low-current/low-voltage capability makes the IFND89 ideal for battery operation.”
The new JFET devices are very specialized products that are capable of meeting the performance requirements that no other IC technology can satisfy. The small signal analog applications demanding the extremely low-noise or high gain are mainly well-suited for the JFET technology. Examples incorporate test and measurement instrumentation, medical instrumentation and devices, all types of sensors and particle detection, consumer-oriented products such as high-end audio and microphones, and various military applications.
The new IFND89 chip is being provided in five leaded SC-70 package and also in bumped or standard die format. Priced at $0.61 in quantities of 25,000 units, this new InterFET JFET device is presently available in sample quantities with production planned for the second quarter of 2009.
InterFET is a US-based manufacturer and global supplier of discrete JFETs, custom integrated circuits, hybrid integrated circuits (MCM-C) and related semiconductor devices.
