The new power MOSFETs are optimized for advanced switching performance in a wide range of high power switching applications.
The new GigaMOS Trench Power MOSFETs include IXYS’ Advanced Trench Technology to offer extremely low Rds(on) and gate charge (Qg), while maintaining advanced switching performance and ruggedness. The power switching capability is further improved by company’s proven HiPerFET process yielding a fast intrinsic rectifier which offers low reverse recovery charge (Qrr) and excellent commutating dV/dt ratings. Added features incorporate a 175 degree Centigrade operating temperature and avalanche capabilities. These integrated product attributes coupled with high current ratings, make for an ideal device for high current power switching applications.
IXYS’ new GigaMOS Trench Power MOSFETs are available in a variety of standard packages and are provided in 150V, 175V, 200V, 250V and 300V grades with current ratings from 120A to 280A. These new Power MOSFETs offer the designers with high current solutions in various applications like DC to DC converters, battery chargers, switch/resonant mode power supplies, dc choppers, motor drives, uninterruptible power supplies and synchronous rectifiers. The high current capability of these new devices make them suitable for the electric and hybrid car and carts and other high power battery powered electrical equipment and tools.
IXYS is a US-based manufacturer of power semiconductor and IC for power conversion applications.
