This new 1-Gigabit DDR2 component (x8) and a related 1-Gigabyte 800 Megabits per second (Mbps) DDR2 SODIMM (small outline DRAM inline memory module) both to be processed at 40-nm have been certified in the Intel Platform Validation program for use with the Intel GM45 series Express mobile chipsets.
“Securing extremely advanced technology and system/platform validated operability underscores our commitment as technology leader to deploying the most efficient means of producing DRAM in the marketplace,” said Kevin Lee, vice president, technical marketing, Samsung Semiconductor, Inc.
The new 40-nm class process technology will reduce voltage against a 50-nm class device, which the company anticipates to translate into about a 30% power savings.
The company also anticipates that its 40-nm process node will mark a step toward development of new ultra-high performance DRAM technologies like DDR4.
